Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria

نویسندگان

  • Francisco J. García-Sánchez
  • Adelmo Ortiz-Conde
  • Juan Muci
چکیده

Undoped-body MOSFETs are currently becoming increasingly important and the value of threshold voltage is often used to assess the reliability of fabricated devices. However there exists a disparity of threshold voltage criteria proposed for these novel devices. The concept of threshold voltage in undoped-body MOSFETs is examined and various existing criteria are analyzed and compared in an effort to clarify the ambiguity of the meaning of threshold and understand its dependence on technological parameters in these devices. Phenomenological considerations are also presented to shed light on the behavior of the sub-threshold slope with changing semiconductor body thickness. 2005 Elsevier Ltd. All rights reserved.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

eGaN® FET Drivers and Layout Considerations EFFICIENT POWER CONVERSION DriviNG eGaN® FETs

DriviNG eGaN® FETs When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

متن کامل

eGaN® FET Drivers and Layout Considerations

DRIVING eGaN® FETS When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop. The maximum allowable gate-source voltage for an eGaN FET of 6 V is low in comparison with traditional silicon. Secondly, the gate threshold is also low compared to most p...

متن کامل

Assessment of Global Variability in UTBB MOSFETs in Subthreshold Regime

The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the tra...

متن کامل

Gate-All-Around Silicon Nanowire MOSFETs: Top-down Fabrication and Transport Enhancement Techniques

Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture with a Si nanowire channel is a promising candidate for future technology generations. The gate-all-around geometry enhances the electrostatic control and hence gate length...

متن کامل

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

This paper presents a carrier-based continuous analytic I-V model for long channel undoped (lightly doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. It is based on the solution of PoissonBoltzmann equation, and the current continuity equation of Pao-Sah current formulation in terms of the mobile carrier concentration under an appropriate boundary approximation. The model is contin...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Microelectronics Reliability

دوره 46  شماره 

صفحات  -

تاریخ انتشار 2006